Search Results - tangali+sudarshan

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A Method and Apparatus for Slicing Hard, Brittle Materials

Reference #: 00465The University of South Carolina is offering licensing opportunities for this technologyInvention Description:This novel invention involves both a method and apparatus for the slicing of ingots, particularly silicon carbide (SiC) and hard brittle materials. The cutting machine provides a high cutting speed of the ingot.Advantages...

Published: 6/9/2022 | Inventor(s): Tangali Sudarshan, Igor Agafonov, Robert Kennedy

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Category(s): Engineering and Physical Sciences

Method of Growing High Quality, Thick SiC Epitaxial Films at High Growth Rates in a Hotwall CVD Reactor

Reference #: 00948The University of South Carolina is offering licensing opportunities for Method of Growing High Quality, Thick SiC Epitaxial Films at High Growth Rates in a Hotwall CVD ReactorBackground:One of the greatest challenges of growing SiC epitaxial films by high temperature chemical vapor deposition (CVD) is to restrict the gas phase nucleation...

Published: 2/16/2018 | Inventor(s): Tangali Sudarshan, Tawhid Rana

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Category(s): Engineering and Physical Sciences

Basal Plane Dislocations Elimination and Conversion Below the Epilayer Interface

Reference #: 01252The University of South Carolina is offering licensing opportunities for a novel approach for improving the quality of semiconductor materials (4H-SiC).Background:Power electronic semiconductor devices are critical components in next-generation energy-efficient power systems such as electric vehicles, smart grid power controls, and...

Published: 5/27/2021 | Inventor(s): Tangali Sudarshan, M.V.S. Chandrashekhar, Anusha Balachandran

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Category(s): Engineering and Physical Sciences, Energy

Optically Switched Graphene/4H-SiC Junction Bipolar Transistor (G-SiC BJT)

Reference #: 01129The University of South Carolina is offering licensing opportunities for a novel bipolar transistor junction that is highly sensitive to UV light and useful for detection devices such as flame detectors, spectrometers, and missile tracking systems. The transistor may also be adopted for power electronic systems.Invention Description:The...

Published: 5/10/2018 | Inventor(s): Mv.s. Chandrashekhar, Tangali Sudarshan, Sabih Omar, Gabriel Brown, Shamaita Shetu

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Category(s): Engineering and Physical Sciences

Method of Growing High Quality Epitaxial Graphene with Thickness Controllability

Reference #: 01008The University of South Carolina is offering licensing opportunities for a method of achieving thin to thick graphene from a few monolayers to several microns with excellent surface morphology and uniformity, the combination of which is not realizable by other techniques.Invention Description:The subject invention is a novel method...

Published: 6/27/2023 | Inventor(s): Tangali Sudarshan, Tawhid Rana, M.V.S. Chandrashekhar

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Category(s): Engineering and Physical Sciences, Energy

A Method of Eliminating Forward Voltage Drift in SiC PiN and PN Diodes

Reference #: 00385 The University of South Carolina is offering licensing opportunities for this technology. Invention Description: This invention is a novel method for fabricating SiC PiN and PN diodes that do not experience voltage drift during operation. This new process involves the formation of a linearly graded, deep pn junction resulting from...

Published: 9/1/2022 | Inventor(s): Tangali Sudarshan, Stanislav Soloviev, Ying Gao

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Category(s): Engineering and Physical Sciences, Energy

Nondestructive Defect Delineation in SiC Wafers Using Optical Stress Technique

Reference #: 00367 The University of South Carolina is offering licensing opportunities for this technology Invention Description: This invention is cost-effective, rapid, and nondestructive characterization technique, which can be used for fast and routine SiC wafer-scale evaluation of structural and crystallographic defects. The technique employed...

Published: 9/2/2022 | Inventor(s): Tangali Sudarshan, Xianyun Ma, Toshiro Kubota, Parag Talekar, Matthew Parker

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Category(s): Engineering and Physical Sciences

A Method to Increase and Control Carrier Lifetime in SiC

Reference #: 00694 Invention Description: This invention is a method to use Silicon Carbide (SiC) epilayers for bipolar devices, which gives the user control of the carrier lifetime. Background: Until now, there has been no method for controlling or improving the carrier lifetime using the Chemical Vapor Deposition (CVD). Carrier lifetime is a...

Published: 9/2/2022 | Inventor(s): Tangali Sudarshan, Amitesh Shrivastava

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Category(s): Engineering and Physical Sciences

Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films

Reference #: 00932 The University of South Carolina is offering licensing opportunities for an optimized process for the pre-treatment of the SiC substrate to reduce or eliminate basal plane dislocation and in-grown stacking faults in SiC epitaxial films for the fabrication of state of the art electronics and optical devices. This process offers significant...

Published: 1/22/2018 | Inventor(s): Tangali Sudarshan, Haizheng Song

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Category(s): Engineering and Physical Sciences