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Optically Switched Graphene/4H-SiC Junction Bipolar Transistor (G-SiC BJT)

Reference #: 01129The University of South Carolina is offering licensing opportunities for a novel bipolar transistor junction that is highly sensitive to UV light and useful for detection devices such as flame detectors, spectrometers, and missile tracking systems. The transistor may also be adopted for power electronic systems.Invention Description:The...

Published: 5/10/2018 | Inventor(s): Mv.s. Chandrashekhar, Tangali Sudarshan, Sabih Omar, Gabriel Brown, Shamaita Shetu

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Category(s): Engineering and Physical Sciences