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Method of Growing High Quality, Thick SiC Epitaxial Films at High Growth Rates in a Hotwall CVD Reactor
Reference #: 00948The University of South Carolina is offering licensing opportunities for Method of Growing High Quality, Thick SiC Epitaxial Films at High Growth Rates in a Hotwall CVD ReactorBackground:One of the greatest challenges of growing SiC epitaxial films by high temperature chemical vapor deposition (CVD) is to restrict the gas phase nucleation...
Published: 2/16/2018
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Inventor(s):
Tangali Sudarshan
,
Tawhid Rana
Keywords(s):
Category(s):
Engineering and Physical Sciences
Method of Growing High Quality Epitaxial Graphene with Thickness Controllability
Reference #: 01008The University of South Carolina is offering licensing opportunities for a method of achieving thin to thick graphene from a few monolayers to several microns with excellent surface morphology and uniformity, the combination of which is not realizable by other techniques.Invention Description:The subject invention is a novel method...
Published: 6/27/2023
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Inventor(s):
Tangali Sudarshan
,
Tawhid Rana
,
M.V.S. Chandrashekhar
Keywords(s):
Category(s):
Engineering and Physical Sciences
,
Energy
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