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Nondestructive Defect Delineation in SiC Wafers Using Optical Stress Technique

Reference #: 00367 The University of South Carolina is offering licensing opportunities for this technology Invention Description: This invention is cost-effective, rapid, and nondestructive characterization technique, which can be used for fast and routine SiC wafer-scale evaluation of structural and crystallographic defects. The technique employed...

Published: 9/2/2022 | Inventor(s): Tangali Sudarshan, Xianyun Ma, Toshiro Kubota, Parag Talekar, Matthew Parker

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Category(s): Engineering and Physical Sciences