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A Method to Increase and Control Carrier Lifetime in SiC

Reference #: 00694 Invention Description: This invention is a method to use Silicon Carbide (SiC) epilayers for bipolar devices, which gives the user control of the carrier lifetime. Background: Until now, there has been no method for controlling or improving the carrier lifetime using the Chemical Vapor Deposition (CVD). Carrier lifetime is a...

Published: 9/2/2022 | Inventor(s): Tangali Sudarshan, Amitesh Shrivastava

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Category(s): Engineering and Physical Sciences