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Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films

Reference #: 00932 The University of South Carolina is offering licensing opportunities for an optimized process for the pre-treatment of the SiC substrate to reduce or eliminate basal plane dislocation and in-grown stacking faults in SiC epitaxial films for the fabrication of state of the art electronics and optical devices. This process offers significant...

Published: 1/22/2018 | Inventor(s): Tangali Sudarshan, Haizheng Song

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Category(s): Engineering and Physical Sciences