Search Results - asif+khan

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New Approach For Fabricating N-polar AlxGa1-xN Devices

Reference #: 01435 The University of South Carolina is offering licensing opportunities for a new approach for N-polar AlxGa1-xN Devices. Background: A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction between two materials with different band gaps where...

Published: 9/4/2022 | Inventor(s): Asif Khan

Keywords(s): High Voltage Transistors, N-polar AlxGa1-xN, Power Electronics

Category(s): Engineering and Physical Sciences

Transfer of Wide and Ultrawide Bandgap Layers to Engineered Substrate

Reference #: 01577 The University of South Carolina is offering licensing opportunities for Transfer of Wide and Ultrawide Bandgap Layers to Engineered Substrate Background: The intrinsic properties of both wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductor materials make them suitable for a wide range of other applications in high power...

Published: 1/3/2023 | Inventor(s): Asif Khan, M.V.S. Chandrashekhar, MD Alam, Mikhail (Mike) Gaevski

Keywords(s): Flexible electronics, high-power electronics, Laser liftoff, Mechanical transfer, Thermal management

Category(s): Energy, Engineering and Physical Sciences

Deep-scaling of deep ultraviolet micro-sized emitters and modular interconnection thereof

Reference #: 01529 The University of South Carolina is offering licensing opportunities for Deep scaling of deep ultraviolet micro-sized emitters and modular interconnection thereof. Background: One of the main problems with deep ultraviolet (DUV) light-emitting diodes (LEDs) is that they get hot while they are operating, limiting the amount of power...

Published: 9/3/2022 | Inventor(s): Asif Khan, Richard Floyd, Mikhail (Mike) Gaevski, M.V.S. Chandrashekhar, Grigory Simin

Keywords(s): AlGaN LED, DUV LED, light output power, micro-LED, micropixel LED, micro-sized LED, Size-dependence of spectral stability, Thermal management, ultraviolet LED, UVC LED

Category(s): Energy, Engineering and Physical Sciences

N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices

Reference #: 01434 The University of South Carolina is offering licensing opportunities for new approaches for fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices. Background: A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction...

Published: 9/4/2022 | Inventor(s): Asif Khan

Keywords(s): High Electron Mobility Transistors (HEMT), Light Emitting Diode, Non-polar substrates, Power Electronics

Category(s): Engineering and Physical Sciences

Selectively Doped III-nitride High Electron Mobility Transistor

Reference #: 00934Background:University of South Carolina (USC) has pioneered the development of AlInGaN based insulating gate heterojunction field-effect-transistors. This includes AlGaN (barrier)/GaN (channel), AlGaN (barrier)/InGaN (channel) and AlInGaN (lattice matched barrier)/GaN (channel) devices. In addition, the University was the first to...

Published: 2/16/2018 | Inventor(s): Asif Khan, Qhalid Fareed, Vinod Adivarahan

Keywords(s):

Category(s): Engineering and Physical Sciences