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Selectively Doped III-nitride High Electron Mobility Transistor
Reference #: 00934Background:University of South Carolina (USC) has pioneered the development of AlInGaN based insulating gate heterojunction field-effect-transistors. This includes AlGaN (barrier)/GaN (channel), AlGaN (barrier)/InGaN (channel) and AlInGaN (lattice matched barrier)/GaN (channel) devices. In addition, the University was the first to...
Published: 2/16/2018   |   Inventor(s): Asif Khan, Qhalid Fareed, Vinod Adivarahan
Category(s): Engineering and Physical Sciences
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