New Approach For Fabricating N-polar AlxGa1-xN Devices


Reference #: 01435

The University of South Carolina is offering licensing opportunities for a new approach for N-polar AlxGa1-xN Devices.


A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction between two materials with different band gaps where electron states cannot exist.  HEMTs have high power performance and can operate at higher frequencies up to millimeter wave, which is attractive for power electronics such as cell phones, TV receivers, and voltage converters.

Invention Description:

This invention proposes a new approach for fabricating N-polar devices without the need for developing N-polar AlxGa1-xN buffer layers over substrates such as sapphire, SiC, GaN, AlN and AlxGa1-xN. This example is for fabricating a N-polar GaN-AlGaN HEMT, but the approach is universal and can be used for any other device type such as LEDs, detectors, modulators, lasers, etc.

Potential Applications:

HEMT’s higher frequencies are used in cell phones, TV receivers, and voltage converters. This technique can be used in other components in any installment, however.

Advantages and Benefits:

Improving battery technology has the present potential to be a very profitable and beneficial development.  Improving batteries in small electronic devices allows for an improved and end-user experience, plus it is a selling point for device brands and manufacturers.

Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date Patent Status
New Approach for Fabricating N-Polar AlxGa1-xN Devices Utility United States 17/504,685   10/19/2021     Filed
For Information, Contact:
Technology Commercialization
University of South Carolina
Asif Khan
High Voltage Transistors
N-polar AlxGa1-xN
Power Electronics
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