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N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices

Reference #: 01434 The University of South Carolina is offering licensing opportunities for new approaches for fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices. Background: A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction...

Published: 9/4/2022 | Inventor(s): Asif Khan

Keywords(s): High Electron Mobility Transistors (HEMT), Light Emitting Diode, Non-polar substrates, Power Electronics

Category(s): Engineering and Physical Sciences