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New Approach For Fabricating N-polar AlxGa1-xN Devices

Reference #: 01435 The University of South Carolina is offering licensing opportunities for a new approach for N-polar AlxGa1-xN Devices. Background: A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction between two materials with different band gaps where...

Published: 9/4/2022 | Inventor(s): Asif Khan

Keywords(s): High Voltage Transistors, N-polar AlxGa1-xN, Power Electronics

Category(s): Engineering and Physical Sciences