Self-biased 4H-SiC MOS devices for radiation detection


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Reference #: 01614

The University of South Carolina is offering licensing opportunities for Self-biased 4H-SiC MOS devices for radiation detection.


4H-Silicon Carbide has a unique combination of physical properties such as excellent carrier transport properties, high breakdown voltage, high displacement threshold, high thermal conductivity, chemical inertness, and mechanical strength, that make it suitable as the only practical wide bandgap (3.27 eV) electronic material for harsh environment device and sensor fabrication.

Invention Description:

For the first time, we report the fabrication of high-performing metal-oxide-semiconductor (MOS) devices by depositing yttrium oxide epitaxial layers through pulsed laser deposition on high-quality 4H-SiC epitaxial layers. The novel MOS devices revealed an extraordinarily long hole diffusion length that has never been reported in as-grown 4H-SiC epitaxial layers. These devices have been investigated as radiation detectors which demonstrated an excellent radiation response at zero applied bias (self-biased) with a record-high energy resolution.

Potential Applications:

4H-SiC radiation detectors are compact, low power consuming, and high-performing devices in high temperature and high radiation environments, and hence, finds immense applications as sensors and detectors in harsh environment applications. A self-biased 4H-SiC radiation detector is a much sought-after device for NASA’s or DOD's space missions where carrying power supplies for biasing creates logistics issues. The discussed device concepts can also be applied for exploring other wide bandgap semiconductors (e.g. GaN, Ga2O3, etc.) as bias-less operating radiation detectors.

Advantages and Benefits:

Our invention discusses novel device design and new concepts which address challenges in field applications with high technological importance. The presented results will open new research avenues in homeland security, nuclear safeguard, non-proliferation, high-energy physics research, medical imaging, etc.


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For licensing information contact:

Nikki Biagas, Licensing & Compliance Manager-

UofSC Technology Commercialization Office-


Patent Information:
For Information, Contact:
Technology Commercialization
University of South Carolina
Krishna Mandal
Sandeep Chaundhuri
Epitaxial layers
MOS devices
pulsed laser deposition
radiation detectors
silicon carbide (4H-SiC)
yttrium oxide (Y2O3)
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