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Self-biased 4H-SiC MOS devices for radiation detection

Reference #: 01614 The University of South Carolina is offering licensing opportunities for Self-biased 4H-SiC MOS devices for radiation detection. Background: 4H-Silicon Carbide has a unique combination of physical properties such as excellent carrier transport properties, high breakdown voltage, high displacement threshold, high thermal conductivity,...

Published: 10/17/2024 | Inventor(s): Krishna Mandal, Sandeep Chaundhuri

Keywords(s): Epitaxial layers, MOS devices, pulsed laser deposition, radiation detectors, silicon carbide (4H-SiC), yttrium oxide (Y2O3)

Category(s): Energy, Engineering and Physical Sciences, Environmental and Sustainability