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In-situ deposition of oxide passivation layer on III-Nitride based HEMT

Reference #: 01623 The University of South Carolina is offering licensing opportunities for in-situ deposition of oxide passivation layer on III-Nitride based HEMT Background: The passivation layers on III-Nitride-based high electron mobility transistors (HEMTs) are essential for realizing high breakdown voltage and low leakage current applications....

Published: 4/2/2024 | Inventor(s): Iftikhar Ahmad, Samiul Hasan, Mohi Uddin Jewel

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Category(s): Chemistry and Biochemistry